Please use this identifier to cite or link to this item:
|Title:||Effect of electric field on interfacial thermal resistance between silicon and water at nanoscales||Authors:||Yenigün, Onur
Interfacial thermal resistance
|Issue Date:||2019||Publisher:||Avestia Publishing||Abstract:||In this study, heat transfer rate of a nano-confined liquid is controlled by applying an electric field parallel to the heat transfer direction. Molecular Dynamics simulations are performed for deionized water confined between silicon slabs, where their surfaces oppositely charged to create an electric field perpendicular to the silicon wall to promote the electrowetting. Electric field strengths used in this study are 0, 0.18 and 0.35 V/nm. To investigate the effect of electric field on heat transfer, first water density profiles near the silicon walls are examined. Results shows that by applying electric field, water molecules near the silicon walls develop layering, which indicates the increased solid/liquid coupling. With the increasing electric field strength, an increase in the peak of the density layering is observed. Furthermore, heat transfer at the solid/liquid interface is characterized with the Kapitza length values. The results show that applying electric field reduces the interfacial thermal resistance between water and silicon due to the increased solid/liquid coupling and doubles the total heat flux. © 2019, Avestia Publishing.||Description:||5th World Congress on Mechanical, Chemical, and Material Engineering, MCM 2019 -- 15 August 2019 through 17 August 2019 -- -- 141318||URI:||https://doi.org/10.11159/htff19.152
|Appears in Collections:||Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection|
Show full item record
checked on Oct 24, 2021
Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.