Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2764
Title: High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel method
Authors: Okur, Salih
Yakuphanoğlu, Fahrettin
Stathatos, E.
Okur, Salih
Izmir Institute of Technology. Physics
Keywords: Phototransistors
Thin films
Interface state density
Organic semiconductor
Pentacene
Issue Date: Apr-2010
Publisher: Elsevier Ltd.
Source: Okur, S., Yakuphanoğlu, F., and Stathatos, E. (2010). High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel method. Microelectronic Engineering, 87(4), 635-640. doi:10.1016/j.mee.2009.08.029
Abstract: We have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO2 gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with nanostructured SiO2 as gate dielectric have been investigated. The photocurrent of the transistor increases with an increase in illumination intensity. This suggests that the pentacene thin film transistor behaves as a phototransistor with p-channel characteristics. The photosensitivity and responsivity values of the transistor are 630.4 and 0.10 A/W, respectively at the off state under AM 1.5 light illumination. The field effect mobility of the pentacene phototransistor was also found to be 2.96 cm2/Vs. The nanostructured surface of the gate possibly is the cause of the high-mobility value of the phototransistor due to light scattering from the increased surface area. Crown Copyright © 2009.
URI: http://doi.org/10.1016/j.mee.2009.08.029
http://hdl.handle.net/11147/2764
ISSN: 0167-9317
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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