Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2764
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dc.contributor.authorOkur, Salih-
dc.contributor.authorYakuphanoğlu, Fahrettin-
dc.contributor.authorStathatos, E.-
dc.date.accessioned2017-01-12T11:36:10Z-
dc.date.available2017-01-12T11:36:10Z-
dc.date.issued2010-04-
dc.identifier.citationOkur, S., Yakuphanoğlu, F., and Stathatos, E. (2010). High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel method. Microelectronic Engineering, 87(4), 635-640. doi:10.1016/j.mee.2009.08.029en_US
dc.identifier.issn0167-9317-
dc.identifier.urihttp://doi.org/10.1016/j.mee.2009.08.029-
dc.identifier.urihttp://hdl.handle.net/11147/2764-
dc.description.abstractWe have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO2 gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with nanostructured SiO2 as gate dielectric have been investigated. The photocurrent of the transistor increases with an increase in illumination intensity. This suggests that the pentacene thin film transistor behaves as a phototransistor with p-channel characteristics. The photosensitivity and responsivity values of the transistor are 630.4 and 0.10 A/W, respectively at the off state under AM 1.5 light illumination. The field effect mobility of the pentacene phototransistor was also found to be 2.96 cm2/Vs. The nanostructured surface of the gate possibly is the cause of the high-mobility value of the phototransistor due to light scattering from the increased surface area. Crown Copyright © 2009.en_US
dc.description.sponsorshipDPT2003K120390en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPhototransistorsen_US
dc.subjectThin filmsen_US
dc.subjectInterface state densityen_US
dc.subjectOrganic semiconductoren_US
dc.subjectPentaceneen_US
dc.titleHigh-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel methoden_US
dc.typeArticleen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume87en_US
dc.identifier.issue4en_US
dc.identifier.startpage635en_US
dc.identifier.endpage640en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.mee.2009.08.029-
dc.relation.doi10.1016/j.mee.2009.08.029en_US
dc.coverage.doi10.1016/j.mee.2009.08.029en_US
item.openairetypeArticle-
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.languageiso639-1en-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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