Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7619
Title: Effect of annealing on the density of defects in epitaxial CdTe (211)/GaAs
Authors: Bakali, Emine
Selamet, Yusuf
Tarhan, Enver
Keywords: Cadmium telluride
Dislocations
Thermal cycle annealing
Molecular beam epitaxy
Annealing parameters
Thin films
Issue Date: Aug-2018
Publisher: Springer Verlag
Source: Bakali, E., Selamet, Y., and Tarhan, E. (2018). Effect of annealing on the density of defects in epitaxial CdTe (211)/GaAs. Journal of Electronic Materials, 47(8), 4780-4792. doi:10.1007/s11664-018-6352-0
Abstract: CdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin films under varying annealing parameters such as annealing temperature, annealing duration, and number of cycles. Annealings were carried out using a homemade annealing reactor possessing a special heater element made of a Si wafer for rapid heating. The density of dislocations, which were made observable with a scanning electron microscope after etching with an Everson solution, were calculated by counting the number of dislocations per unit surface area, hence the term etch pit density (EPD). We were able to decrease EPD values by one order of magnitude after annealing. For example, the best EPD value after a 20-min annealing at 400°C was ∼ 2 × 107 cm−2 for a 1.63-μm CdTe thin film which was about 9.5 × 107 cm−2 before annealing. We also employed Raman scattering measurements to see the changes in the structural quality of the samples. From the Raman measurements, we were able to see improvements in the quality of our samples from the annealing by studying the ratio of 2LO/LO phonon mode Raman intensities. We also observed a clear decrease in the intensity of Te precipitations-related modes, indicating a decrease in the size and number of these precipitations.
URI: https://doi.org/10.1007/s11664-018-6352-0
https://hdl.handle.net/11147/7619
ISSN: 0361-5235
0361-5235
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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