Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7619
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dc.contributor.authorBakali, Emine-
dc.contributor.authorSelamet, Yusuf-
dc.contributor.authorTarhan, Enver-
dc.date.accessioned2020-01-23T08:08:40Z-
dc.date.available2020-01-23T08:08:40Z-
dc.date.issued2018-08en_US
dc.identifier.citationBakali, E., Selamet, Y., and Tarhan, E. (2018). Effect of annealing on the density of defects in epitaxial CdTe (211)/GaAs. Journal of Electronic Materials, 47(8), 4780-4792. doi:10.1007/s11664-018-6352-0en_US
dc.identifier.issn0361-5235-
dc.identifier.urihttps://doi.org/10.1007/s11664-018-6352-0-
dc.identifier.urihttps://hdl.handle.net/11147/7619-
dc.description.abstractCdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin films under varying annealing parameters such as annealing temperature, annealing duration, and number of cycles. Annealings were carried out using a homemade annealing reactor possessing a special heater element made of a Si wafer for rapid heating. The density of dislocations, which were made observable with a scanning electron microscope after etching with an Everson solution, were calculated by counting the number of dislocations per unit surface area, hence the term etch pit density (EPD). We were able to decrease EPD values by one order of magnitude after annealing. For example, the best EPD value after a 20-min annealing at 400°C was ∼ 2 × 107 cm−2 for a 1.63-μm CdTe thin film which was about 9.5 × 107 cm−2 before annealing. We also employed Raman scattering measurements to see the changes in the structural quality of the samples. From the Raman measurements, we were able to see improvements in the quality of our samples from the annealing by studying the ratio of 2LO/LO phonon mode Raman intensities. We also observed a clear decrease in the intensity of Te precipitations-related modes, indicating a decrease in the size and number of these precipitations.en_US
dc.description.sponsorshipSSM (Undersecretariat for Defence Industries of Turkey) and ASELSANen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCadmium tellurideen_US
dc.subjectDislocationsen_US
dc.subjectThermal cycle annealingen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectAnnealing parametersen_US
dc.subjectThin filmsen_US
dc.titleEffect of annealing on the density of defects in epitaxial CdTe (211)/GaAsen_US
dc.typeArticleen_US
dc.authorid0000-0003-3167-3956en_US
dc.institutionauthorBakali, Emine-
dc.institutionauthorSelamet, Yusuf-
dc.institutionauthorTarhan, Enver-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume47en_US
dc.identifier.issue8en_US
dc.identifier.startpage4780en_US
dc.identifier.endpage4792en_US
dc.identifier.wosWOS:000437146400080en_US
dc.identifier.scopus2-s2.0-85047208551en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/s11664-018-6352-0-
dc.relation.doi10.1007/s11664-018-6352-0en_US
dc.coverage.doi10.1007/s11664-018-6352-0en_US
dc.identifier.scopusqualityQ2-
item.fulltextWith Fulltext-
item.openairetypeArticle-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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