Please use this identifier to cite or link to this item:
Title: Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes
Authors: Aydın, Hasan
Bacaksız, Cihan
Yağmurcukardeş, Nesli
Karakaya, Caner
Mermer, Ömer
Can, Mustafa
Senger, Ramazan Tuğrul
Şahin, Hasan
Selamet, Yusuf
Keywords: Graphene
Schottky diode
Self assembled monolayers
Aromatic compounds
Silicon compounds
Issue Date: Jan-2018
Publisher: Elsevier Ltd.
Source: Aydın, H., Bacaksız, C., Yağmurcukardeş, N., Karakaya, C., Mermer, Ö., Can, M., Senger, R. T., Şahin, H., and Selamet, Y. (2018). Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes. Applied Surface Science, 428, 1010-1017. doi:10.1016/j.apsusc.2017.09.204
Abstract: We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.
ISSN: 0169-4332
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Files in This Item:
File Description SizeFormat 
7528.pdfMakale (Article)2.43 MBAdobe PDFThumbnail
Show full item record

CORE Recommender


checked on Feb 17, 2024


checked on Feb 10, 2024

Page view(s)

checked on Feb 23, 2024


checked on Feb 23, 2024

Google ScholarTM



Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.