Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7123
Title: Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure
Authors: Cantaş, Ayten
Özyüzer, Lütfi
Aygün, Gülnur
Cantaş, Ayten
Özyüzer, Lütfi
Aygün, Gülnur
Izmir Institute of Technology. Physics
Keywords: FTIR
High-k dielectric material
Multilayer structures
Spectroscopic Ellipsometry
Reactive RF sputtering
Issue Date: Sep-2018
Publisher: IOP Publishing Ltd.
Source: Cantaş, A., Özyüzer, L., and Aygün, G. (2018). Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure. Materials Research Express, 5(9). doi:10.1088/2053-1591/aad856
Abstract: A HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.
URI: http://doi.org/10.1088/2053-1591/aad856
http://hdl.handle.net/11147/7123
ISSN: 2053-1591
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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