Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7123
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dc.contributor.authorCantaş, Ayten-
dc.contributor.authorÖzyüzer, Lütfi-
dc.contributor.authorAygün, Gülnur-
dc.date.accessioned2019-02-21T07:21:33Z-
dc.date.available2019-02-21T07:21:33Z-
dc.date.issued2018-09-
dc.identifier.citationCantaş, A., Özyüzer, L., and Aygün, G. (2018). Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure. Materials Research Express, 5(9). doi:10.1088/2053-1591/aad856en_US
dc.identifier.issn2053-1591-
dc.identifier.urihttp://doi.org/10.1088/2053-1591/aad856-
dc.identifier.urihttp://hdl.handle.net/11147/7123-
dc.description.abstractA HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.en_US
dc.description.sponsorshipThe Scientific and Technological Research Council of Turkey (TUBITAK project 113F349)en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltd.en_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/MFAG/113F349en_US
dc.relation.ispartofMaterials Research Expressen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectFTIRen_US
dc.subjectHigh-k dielectric materialen_US
dc.subjectMultilayer structuresen_US
dc.subjectSpectroscopic Ellipsometryen_US
dc.subjectReactive RF sputteringen_US
dc.titleComparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structureen_US
dc.typeArticleen_US
dc.authoridTR5135en_US
dc.authoridTR39698en_US
dc.institutionauthorCantaş, Ayten-
dc.institutionauthorÖzyüzer, Lütfi-
dc.institutionauthorAygün, Gülnur-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume5en_US
dc.identifier.issue9en_US
dc.identifier.wosWOS:000441828300002en_US
dc.identifier.scopus2-s2.0-85052301854en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1088/2053-1591/aad856-
dc.relation.doi10.1088/2053-1591/aad856en_US
dc.coverage.doi10.1088/2053-1591/aad856en_US
dc.identifier.wosqualityQ3-
dc.identifier.scopusqualityQ2-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeArticle-
item.languageiso639-1en-
item.fulltextWith Fulltext-
crisitem.author.dept04.05. Department of Pyhsics-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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