Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/6281
Title: Nitrogen doping for facile and effective modification of graphene surfaces
Authors: Yanılmaz, Alper
Tomak, Aysel
Akbalı, Barış
Bacaksız, Cihan
Özçeri, Elif
Arı, Ozan
Senger, Ramazan Tuğrul
Selamet, Yusuf
Zareie, Hadi M.
Yanılmaz, Alper
Tomak, Aysel
Akbalı, Barış
Bacaksız, Cihan
Özçeri, Elif
Arı, Ozan
Senger, Ramazan Tuğrul
Selamet, Yusuf
Izmir Institute of Technology. Physics
Keywords: Graphene
Doping concentration
Nitrogen plasma
Ethylene
Density functional theory
Issue Date: 2017
Publisher: Royal Society of Chemistry
Source: Yanılmaz, A., Tomak, A., Akbalı, B., Bacaksız, C., Özçeri, E., Arı, O., Senger, R.T., Selamet, Y., and Zareie, H. M. (2017). Nitrogen doping for facile and effective modification of graphene surfaces. Royal Society of Chemistry, 7(45), 28383-28392. doi:10.1039/c7ra03046k
Abstract: We report experimental and theoretical investigations of nitrogen doped graphene. A low-pressure Chemical Vapor Deposition (CVD) system was used to grow large-area graphene on copper foil, using ethylene as the carbon source. Nitrogen-doped graphene (N-graphene) was prepared by exposing the graphene transferred to different substrates to atomic nitrogen plasma. The effect of varying nitrogen flow rates on doping of graphene was investigated while keeping the power and time constant during the process. The N-graphene was characterized via Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Scanning Tunneling Microscopy and Spectroscopy (STM and STS), and Fourier Transform Infrared spectroscopy (FTIR). Raman mapping of N-graphene was also performed to show homogeneity of nitrogen on the graphitic lattice. XPS results have revealed the presence of different nitrogen configurations in the graphitic lattice with similar doping concentrations. Density functional theory (DFT) based calculations showed that the periodic adsorption of N atoms predominantly occurs on top of the C atoms rather than through substitution of C in our N-graphene samples. Our results indicate a feasible procedure for producing N-graphene with homogenous and effective doping which would be valuable in electronic and optical applications.
URI: http://doi.org/10.1039/c7ra03046k
http://hdl.handle.net/11147/6281
ISSN: 2046-2069
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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