Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5942
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dc.contributor.authorYağmurcukardeş, Nesli-
dc.contributor.authorAydın, Hasan-
dc.contributor.authorCan, Mustafa-
dc.contributor.authorYanılmaz, Alper-
dc.contributor.authorMermer, Ömer-
dc.contributor.authorOkur, Salih-
dc.contributor.authorSelamet, Yusuf-
dc.date.accessioned2017-07-18T07:01:15Z-
dc.date.available2017-07-18T07:01:15Z-
dc.date.issued2016-
dc.identifier.citationYağmurcukardeş, N., Aydın, H., Can, M., Yanılmaz, A., Mermer, Ö., Okur, S., and Selamet, Y. (2016). Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance. ECS Journal of Solid State Science and Technology, 5(7), M69-M73. doi:10.1149/2.0141607jssen_US
dc.identifier.issn2162-8769-
dc.identifier.issn2162-8769-
dc.identifier.urihttp://doi.org/10.1149/2.0141607jss-
dc.identifier.urihttp://hdl.handle.net/11147/5942-
dc.description.abstractAu/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.en_US
dc.description.sponsorshipThe Scientific and Technical Research Council of Turkey (112T946)en_US
dc.language.isoenen_US
dc.publisherElectrochemical Society, Inc.en_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/TBAG/112T946en_US
dc.relation.ispartofECS Journal of Solid State Science and Technologyen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSelf assembled monolayersen_US
dc.subjectAromatic compoundsen_US
dc.subjectSiliconen_US
dc.subjectGrapheneen_US
dc.subjectBarrier heightsen_US
dc.subjectAtmospheric pressureen_US
dc.titleEffect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performanceen_US
dc.typeArticleen_US
dc.institutionauthorYağmurcukardeş, Nesli-
dc.institutionauthorAydın, Hasan-
dc.institutionauthorYanılmaz, Alper-
dc.institutionauthorSelamet, Yusuf-
dc.departmentİzmir Institute of Technology. Materials Science and Engineeringen_US
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume5en_US
dc.identifier.issue7en_US
dc.identifier.startpageM69en_US
dc.identifier.endpageM73en_US
dc.identifier.wosWOS:000378840000029en_US
dc.identifier.scopus2-s2.0-84978081410en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1149/2.0141607jss-
dc.relation.doi10.1149/2.0141607jssen_US
dc.coverage.doi10.1149/2.0141607jssen_US
dc.identifier.wosqualityQ3-
dc.identifier.scopusqualityQ2-
item.fulltextWith Fulltext-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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