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https://hdl.handle.net/11147/5942
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DC Field | Value | Language |
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dc.contributor.author | Yağmurcukardeş, Nesli | - |
dc.contributor.author | Aydın, Hasan | - |
dc.contributor.author | Can, Mustafa | - |
dc.contributor.author | Yanılmaz, Alper | - |
dc.contributor.author | Mermer, Ömer | - |
dc.contributor.author | Okur, Salih | - |
dc.contributor.author | Selamet, Yusuf | - |
dc.date.accessioned | 2017-07-18T07:01:15Z | - |
dc.date.available | 2017-07-18T07:01:15Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Yağmurcukardeş, N., Aydın, H., Can, M., Yanılmaz, A., Mermer, Ö., Okur, S., and Selamet, Y. (2016). Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance. ECS Journal of Solid State Science and Technology, 5(7), M69-M73. doi:10.1149/2.0141607jss | en_US |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | http://doi.org/10.1149/2.0141607jss | - |
dc.identifier.uri | http://hdl.handle.net/11147/5942 | - |
dc.description.abstract | Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively. | en_US |
dc.description.sponsorship | The Scientific and Technical Research Council of Turkey (112T946) | en_US |
dc.language.iso | en | en_US |
dc.publisher | Electrochemical Society, Inc. | en_US |
dc.relation | info:eu-repo/grantAgreement/TUBITAK/TBAG/112T946 | en_US |
dc.relation.ispartof | ECS Journal of Solid State Science and Technology | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Self assembled monolayers | en_US |
dc.subject | Aromatic compounds | en_US |
dc.subject | Silicon | en_US |
dc.subject | Graphene | en_US |
dc.subject | Barrier heights | en_US |
dc.subject | Atmospheric pressure | en_US |
dc.title | Effect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performance | en_US |
dc.type | Article | en_US |
dc.institutionauthor | Yağmurcukardeş, Nesli | - |
dc.institutionauthor | Aydın, Hasan | - |
dc.institutionauthor | Yanılmaz, Alper | - |
dc.institutionauthor | Selamet, Yusuf | - |
dc.department | İzmir Institute of Technology. Materials Science and Engineering | en_US |
dc.department | İzmir Institute of Technology. Physics | en_US |
dc.identifier.volume | 5 | en_US |
dc.identifier.issue | 7 | en_US |
dc.identifier.startpage | M69 | en_US |
dc.identifier.endpage | M73 | en_US |
dc.identifier.wos | WOS:000378840000029 | en_US |
dc.identifier.scopus | 2-s2.0-84978081410 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.doi | 10.1149/2.0141607jss | - |
dc.relation.doi | 10.1149/2.0141607jss | en_US |
dc.coverage.doi | 10.1149/2.0141607jss | en_US |
dc.identifier.wosquality | Q3 | - |
dc.identifier.scopusquality | Q2 | - |
item.fulltext | With Fulltext | - |
item.openairetype | Article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
crisitem.author.dept | 04.05. Department of Pyhsics | - |
crisitem.author.dept | 04.05. Department of Pyhsics | - |
Appears in Collections: | Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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