Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5888
Title: Characterization of CdTe growth on GaAs using different etching techniques
Authors: Bilgilisoy, Elif
Özden, Selin
Bakali, Emine
Karakaya, Merve
Selamet, Yusuf
Keywords: Defect decoration etching
Cadmium telluride
Etch pit density
Molecular beam epitaxy
Raman mapping
Issue Date: 26-Sep-2015
Publisher: Springer Verlag
Source: Bilgilisoy, E., Özden, S., Bakali, E., Karakaya, M., and Selamet, Y. (2015). Characterization of CdTe growth on GaAs using different etching techniques. Journal of Electronic Materials, 44(9), 3124-3133. doi:10.1007/s11664-015-3830-5
Abstract: CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm−2 to 2 × 108 cm−2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm−2 to 7 × 107 cm−2 range for samples with thicknesses <2 μm.
URI: https://doi.org/10.1007/s11664-015-3830-5
http://hdl.handle.net/11147/5888
ISSN: 0361-5235
0361-5235
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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