Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5888
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dc.contributor.authorBilgilisoy, Elif-
dc.contributor.authorÖzden, Selin-
dc.contributor.authorBakali, Emine-
dc.contributor.authorKarakaya, Merve-
dc.contributor.authorSelamet, Yusuf-
dc.date.accessioned2017-07-07T11:27:00Z
dc.date.available2017-07-07T11:27:00Z
dc.date.issued2015-09-26
dc.identifier.citationBilgilisoy, E., Özden, S., Bakali, E., Karakaya, M., and Selamet, Y. (2015). Characterization of CdTe growth on GaAs using different etching techniques. Journal of Electronic Materials, 44(9), 3124-3133. doi:10.1007/s11664-015-3830-5en_US
dc.identifier.issn0361-5235
dc.identifier.issn0361-5235-
dc.identifier.urihttps://doi.org/10.1007/s11664-015-3830-5
dc.identifier.urihttp://hdl.handle.net/11147/5888
dc.description.abstractCdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm−2 to 2 × 108 cm−2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm−2 to 7 × 107 cm−2 range for samples with thicknesses <2 μm.en_US
dc.description.sponsorshipGediz Project at Izmir Institute of Technologyen_US
dc.language.isoenen_US
dc.publisherSpringer Verlagen_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDefect decoration etchingen_US
dc.subjectCadmium tellurideen_US
dc.subjectEtch pit densityen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectRaman mappingen_US
dc.titleCharacterization of CdTe growth on GaAs using different etching techniquesen_US
dc.typeArticleen_US
dc.authoridTR246463en_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume44en_US
dc.identifier.issue9en_US
dc.identifier.startpage3124en_US
dc.identifier.endpage3133en_US
dc.identifier.wosWOS:000360311300025
dc.identifier.scopusSCOPUS:2-s2.0-84940437497
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/s11664-015-3830-5-
dc.relation.doi10.1007/s11664-015-3830-5en_US
dc.coverage.doi10.1007/s11664-015-3830-5en_US
item.openairetypeArticle-
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.languageiso639-1en-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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