Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5872
Title: TiS3 nanoribbons: Width-independent band gap and strain-tunable electronic properties
Authors: Kang, Jun
Şahin, Hasan
Özaydın, H. Duygu
Senger, Ramazan Tuğrul
Peeters, François M.
Keywords: Nanoscale materials
Nanoribbons
Optoelectronic devices
Magnetic nanostructures
Issue Date: 10-Aug-2015
Publisher: American Physical Society
Source: Kang, J., Şahin, H., Özaydın, H.D., Senger, R.T., and Peeters, F.M. (2015). TiS3 nanoribbons: Width-independent band gap and strain-tunable electronic properties. Physical Review B - Condensed Matter and Materials Physics, 92(7). doi:10.1103/PhysRevB.92.075413
Abstract: The electronic properties, carrier mobility, and strain response of TiS3 nanoribbons (TiS3 NRs) are investigated by first-principles calculations. We found that the electronic properties of TiS3 NRs strongly depend on the edge type (a or b). All a-TiS3 NRs are metallic with a magnetic ground state, while b-TiS3 NRs are direct band gap semiconductors. Interestingly, the size of the band gap and the band edge position are almost independent of the ribbon width. This feature promises a constant band gap in a b-TiS3 NR with rough edges, where the ribbon width differs in different regions. The maximum carrier mobility of b-TiS3 NRs is calculated by using the deformation potential theory combined with the effective mass approximation and is found to be of the order 103cm2V-1s-1. The hole mobility of the b-TiS3 NRs is one order of magnitude lower, but it is enhanced compared to the monolayer case due to the reduction in hole effective mass. The band gap and the band edge position of b-TiS3 NRs are quite sensitive to applied strain. In addition we investigate the termination of ribbon edges by hydrogen atoms. Upon edge passivation, the metallic and magnetic features of a-TiS3 NRs remain unchanged, while the band gap of b-TiS3 NRs is increased significantly. The robust metallic and ferromagnetic nature of a-TiS3 NRs is an essential feature for spintronic device applications. The direct, width-independent, and strain-tunable band gap, as well as the high carrier mobility, of b-TiS3 NRs is of potential importance in many fields of nanoelectronics, such as field-effect devices, optoelectronic applications, and strain sensors.
URI: https://doi.org/10.1103/PhysRevB.92.075413
http://hdl.handle.net/11147/5872
ISSN: 1098-0121
1098-0121
1550-235X
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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