Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5872
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dc.contributor.authorKang, Jun-
dc.contributor.authorŞahin, Hasan-
dc.contributor.authorÖzaydın, H. Duygu-
dc.contributor.authorSenger, Ramazan Tuğrul-
dc.contributor.authorPeeters, François M.-
dc.date.accessioned2017-07-06T10:39:42Z
dc.date.available2017-07-06T10:39:42Z
dc.date.issued2015-08-10
dc.identifier.citationKang, J., Şahin, H., Özaydın, H.D., Senger, R.T., and Peeters, F.M. (2015). TiS3 nanoribbons: Width-independent band gap and strain-tunable electronic properties. Physical Review B - Condensed Matter and Materials Physics, 92(7). doi:10.1103/PhysRevB.92.075413en_US
dc.identifier.issn1098-0121
dc.identifier.issn1098-0121-
dc.identifier.issn1550-235X-
dc.identifier.urihttps://doi.org/10.1103/PhysRevB.92.075413
dc.identifier.urihttp://hdl.handle.net/11147/5872
dc.description.abstractThe electronic properties, carrier mobility, and strain response of TiS3 nanoribbons (TiS3 NRs) are investigated by first-principles calculations. We found that the electronic properties of TiS3 NRs strongly depend on the edge type (a or b). All a-TiS3 NRs are metallic with a magnetic ground state, while b-TiS3 NRs are direct band gap semiconductors. Interestingly, the size of the band gap and the band edge position are almost independent of the ribbon width. This feature promises a constant band gap in a b-TiS3 NR with rough edges, where the ribbon width differs in different regions. The maximum carrier mobility of b-TiS3 NRs is calculated by using the deformation potential theory combined with the effective mass approximation and is found to be of the order 103cm2V-1s-1. The hole mobility of the b-TiS3 NRs is one order of magnitude lower, but it is enhanced compared to the monolayer case due to the reduction in hole effective mass. The band gap and the band edge position of b-TiS3 NRs are quite sensitive to applied strain. In addition we investigate the termination of ribbon edges by hydrogen atoms. Upon edge passivation, the metallic and magnetic features of a-TiS3 NRs remain unchanged, while the band gap of b-TiS3 NRs is increased significantly. The robust metallic and ferromagnetic nature of a-TiS3 NRs is an essential feature for spintronic device applications. The direct, width-independent, and strain-tunable band gap, as well as the high carrier mobility, of b-TiS3 NRs is of potential importance in many fields of nanoelectronics, such as field-effect devices, optoelectronic applications, and strain sensors.en_US
dc.description.sponsorshipFlemish Science Foundation (FWO-Vl); Methusalem foundation of the Flemish government; Hercules Foundation; FWO Pegasus-Long Marie Curie Fellowship; FWO Pegasus-Short Marie Curie Fellowship; TUBITAK (114F397)en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/MFAG/114F397en_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectNanoscale materialsen_US
dc.subjectNanoribbonsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectMagnetic nanostructuresen_US
dc.titleTiS3 nanoribbons: Width-independent band gap and strain-tunable electronic propertiesen_US
dc.typeArticleen_US
dc.authoridTR2199en_US
dc.institutionauthorÖzaydın, H. Duygu-
dc.institutionauthorSenger, Ramazan Tuğrul-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume92en_US
dc.identifier.issue7en_US
dc.identifier.wosWOS:000359344100014en_US
dc.identifier.scopus2-s2.0-84940056757en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1103/PhysRevB.92.075413-
dc.relation.doi10.1103/PhysRevB.92.075413en_US
dc.coverage.doi10.1103/PhysRevB.92.075413en_US
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeArticle-
item.fulltextWith Fulltext-
crisitem.author.dept04.04. Department of Photonics-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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