Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5835
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dc.contributor.authorÖzçeri, Elif-
dc.contributor.authorSelamet, Yusuf-
dc.date.accessioned2017-07-03T10:51:43Z-
dc.date.available2017-07-03T10:51:43Z-
dc.date.issued2015-10-
dc.identifier.citationÖzçeri, E., and Selamet, Y. (2015). Influence of buffer layers on Ni thin film structure and graphene growth by CVD. Journal of Physics D: Applied Physics, 48(45). doi:10.1088/0022-3727/48/45/455302en_US
dc.identifier.issn0022-3727-
dc.identifier.issn1361-6463-
dc.identifier.urihttps://doi.org/10.1088/0022-3727/48/45/455302-
dc.identifier.urihttp://hdl.handle.net/11147/5835-
dc.description.abstractBuffer and/or adhesive layers were used to decrease the dewetting of Ni thin film at graphene growth temperatures of around 900 °C. Depositing a thin buffer (Al2O3) layer onto SiO2/Si substrate significantly reduced the dewetting effect and surface roughness of Ni catalyst film. Thin adhesive (Cr) layers with or without Al2O3 buffer layers increased the texturing in (1 1 1) orientation, which was promoted by growing at an elevated temperature (450 °C). The effects of pretreatment and growth temperature on crystal orientation, grain size and surface roughness of Ni film were analyzed. Our results indicated a large positive correlation coefficient between the film thickness and surface roughness for thinner and non-buffered films, and a negative correlation coefficient between the thickness and 900 °C -annealed film roughness for thicker and buffered films. The graphene coverage was greatly improved over the films grown with Al2O3 and/or Cr layers. In summary, we suggest that growing high quality, large area, 1- or 2-layer graphene on polycrystalline Ni transition metal thin film is optimized by using Al2O3 and/or Cr layers to reduce Ni dewetting, surface roughness, and groove depth while controlling grain size and texturing in (1 1 1) orientation by annealing at 900 °C.en_US
dc.description.sponsorshipTUBITAK (TBAG-112T946)en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltd.en_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/TBAG/112T946en_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCVDen_US
dc.subjectBuffered growthen_US
dc.subjectFilm pretreatmenten_US
dc.subjectGrapheneen_US
dc.subjectThin filmsen_US
dc.subjectPolycrystallineen_US
dc.subjectTransition metalsen_US
dc.titleInfluence of buffer layers on Ni thin film structure and graphene growth by CVDen_US
dc.typeArticleen_US
dc.authoridTR160243en_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume48en_US
dc.identifier.issue45en_US
dc.identifier.wosWOS:000367070000017
dc.identifier.scopusSCOPUS:2-s2.0-84947125214
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1088/0022-3727/48/45/455302-
dc.relation.doi10.1088/0022-3727/48/45/455302en_US
dc.coverage.doi10.1088/0022-3727/48/45/455302en_US
item.openairetypeArticle-
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.languageiso639-1en-
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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