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https://hdl.handle.net/11147/5317| Title: | Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams | Authors: | Havare, A. Kemal Okur, Salih Yağmurcukardeş, Nesli Can, M. Aydın, H. Şeker, M. Demiç, Şerafettin |
Keywords: | Characterization Atomic force microscopy Schottky barrier diodes Ideality factors |
Publisher: | Polish Academy of Sciences | Source: | Havare, A. K., Okur, S., Yağmurcukardeş, N., Can, M., Aydın, H., Şeker, M., and Demiç, Ş. (2013). Electrical characterizations of schottky diodes on ITO Modified by Aromatic SAMs. Acta Physica Polonica A, 123(2), 456-458. doi:10.12693/APhysPolA.123.456 | Abstract: | In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy. | URI: | http://doi.org/10.12693/APhysPolA.123.456 http://hdl.handle.net/11147/5317 |
ISSN: | 0587-4246 |
| Appears in Collections: | Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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