Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5317
Title: Electrical characterizations of schottky diodes on ITO modified by aromatic SAMs
Authors: Havare, A. Kemal
Okur, Salih
Yağmurcukardeş, Nesli
Can, M.
Aydın, H.
Şeker, M.
Demiç, Şerafettin
Yağmurcukardeş, Nesli
Aydın, H.
Okur, Salih
Izmir Institute of Technology. Materials Science and Engineering
Keywords: Characterization
Atomic force microscopy
Schottky barrier diodes
Ideality factors
Issue Date: Feb-2013
Publisher: Polish Academy of Sciences
Source: Havare, A. K., Okur, S., Yağmurcukardeş, N., Can, M., Aydın, H., Şeker, M., and Demiç, Ş. (2013). Electrical characterizations of schottky diodes on ITO Modified by Aromatic SAMs. Acta Physica Polonica A, 123(2), 456-458. doi:10.12693/APhysPolA.123.456
Abstract: In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
URI: http://doi.org/10.12693/APhysPolA.123.456
http://hdl.handle.net/11147/5317
ISSN: 0587-4246
0587-4246
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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