Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5136
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dc.contributor.authorSevinçli, Haldun-
dc.contributor.authorLehmann, T.-
dc.contributor.authorRyndyk, D. A.-
dc.contributor.authorCuniberti, G.-
dc.date.accessioned2017-03-23T12:59:52Z
dc.date.available2017-03-23T12:59:52Z
dc.date.issued2013-12
dc.identifier.citationSevinçli, H., Lehmann, T., Ryndyk, D.A., and Cuniberti, G. (2013). Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes. Journal of Computational Electronics, 12(4), 685-691. doi:10.1007/s10825-013-0539-7en_US
dc.identifier.issn1569-8025
dc.identifier.issn1569-8025-
dc.identifier.urihttps://doi.org/10.1007/s10825-013-0539-7
dc.identifier.urihttp://hdl.handle.net/11147/5136
dc.description.abstractCharge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications. Disordered nanostructures; Disordered semiconductors; Electron and phonon transports; Electronic applicationen_US
dc.description.sponsorshipEuropean Union project "Carbon nanotube devices at the quantum limit" (CARDEQ); Deutsche Forschungsgemeinschaft; German Excellence Initiative via the Cluster of Excellence "Center for Advancing Electronics Dresden" (cfAED)en_US
dc.language.isoenen_US
dc.publisherSpringer Verlagen_US
dc.relation.ispartofJournal of Computational Electronicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDisordered nanostructuresen_US
dc.subjectDisordered semiconductorsen_US
dc.subjectElectron and phonon transportsen_US
dc.subjectElectronic applicationen_US
dc.subjectThermal conductivityen_US
dc.subjectCarbon nanotubesen_US
dc.titleComparison of electron and phonon transport in disordered semiconductor carbon nanotubesen_US
dc.typeArticleen_US
dc.authoridTR21371en_US
dc.institutionauthorSevinçli, Haldun-
dc.departmentİzmir Institute of Technology. Materials Science and Engineeringen_US
dc.identifier.volume12en_US
dc.identifier.issue4en_US
dc.identifier.startpage685en_US
dc.identifier.endpage691en_US
dc.identifier.wosWOS:000328204600016en_US
dc.identifier.scopus2-s2.0-84890857432en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/s10825-013-0539-7-
dc.relation.doi10.1007/s10825-013-0539-7en_US
dc.coverage.doi10.1007/s10825-013-0539-7en_US
dc.identifier.wosqualityQ3-
dc.identifier.scopusqualityQ2-
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeArticle-
crisitem.author.dept03.09. Department of Materials Science and Engineering-
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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