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Title: Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films
Authors: Aygün, Gülnur
Cantaş, Ayten
Şimşek, Yılmaz
Turan, Raşit
Keywords: Hafnium oxides
Spectroscopic ellipsometer
Fourier transform infrared spectroscopy
X-ray diffraction
XPS depth profiling
Publisher: Elsevier Ltd.
Source: Aygün, G., Cantaş, A., Şimşek, Y., and Turan, R. (2011). Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films. Thin Solid Films, 519(17), 5820-5825. doi:10.1016/j.tsf.2010.12.189
Abstract: HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O 2/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO 2, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind. © 2010 Elsevier B.V. All rights reserved.
Description: EMRS Conference on Frontiers of Multifunctional Oxides, Strasbourg, France, 31 May-04 June 2010
ISSN: 0040-6090
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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