Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5033
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dc.contributor.authorAygün, Gülnur-
dc.contributor.authorCantaş, Ayten-
dc.contributor.authorŞimşek, Yılmaz-
dc.contributor.authorTuran, Raşit-
dc.date.accessioned2017-03-10T11:26:09Z
dc.date.available2017-03-10T11:26:09Z
dc.date.issued2011-06
dc.identifier.citationAygün, G., Cantaş, A., Şimşek, Y., and Turan, R. (2011). Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films. Thin Solid Films, 519(17), 5820-5825. doi:10.1016/j.tsf.2010.12.189en_US
dc.identifier.issn0040-6090
dc.identifier.issn0040-6090-
dc.identifier.urihttp://doi.org/10.1016/j.tsf.2010.12.189
dc.identifier.urihttp://hdl.handle.net/11147/5033
dc.descriptionEMRS Conference on Frontiers of Multifunctional Oxides, Strasbourg, France, 31 May-04 June 2010en_US
dc.description.abstractHfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O 2/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO 2, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind. © 2010 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThe Scientific and Technological Research Council of Turkey (TUBITAK) with project number of 107T117 and partially by Izmir Institute of Technology with research project number of 2008 IYTE 37en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofThin Solid Filmsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectHafnium oxidesen_US
dc.subjectSpectroscopic ellipsometeren_US
dc.subjectFourier transform infrared spectroscopyen_US
dc.subjectX-ray diffractionen_US
dc.subjectXPS depth profilingen_US
dc.titleEffects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 filmsen_US
dc.typeConference Objecten_US
dc.authoridTR39698en_US
dc.institutionauthorAygün, Gülnur-
dc.institutionauthorCantaş, Ayten-
dc.institutionauthorŞimşek, Yılmaz-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume519en_US
dc.identifier.issue17en_US
dc.identifier.startpage5820en_US
dc.identifier.endpage5825en_US
dc.identifier.wosWOS:000292353900024en_US
dc.identifier.scopus2-s2.0-79958011897en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.tsf.2010.12.189-
dc.relation.doi10.1016/j.tsf.2010.12.189en_US
dc.coverage.doi10.1016/j.tsf.2010.12.189en_US
item.openairetypeConference Object-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.cerifentitytypePublications-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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