Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4671
Title: Photoconductivity spectroscopy in hydrogenated microcrystalline silicon thin films
Authors: Güneş, Mehmet
Akdaş, Deniz
Göktaş, Oktay
Carius, Reinhard
Klomfaß, Josef
Finger, Friedhelm
Güneş, Mehmet
Akdaş, Deniz
Göktaş, Oktay
Keywords: Thin films
Photothermal deflection spectroscopy (PDS)
Chemical vapor deposition
Crystalline materials
Hydrogenation
Issue Date: Oct-2003
Publisher: Springer Verlag
Source: Güneş, M., Akdaş, D., Göktaş, O., Carius, R., Klomfaß, J., and Finger, F. (2003). Photoconductivity spectroscopy in hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics, 14(10-12), 729-730. doi:10.1023/A:1026147624811
Abstract: Steady-state photoconductivity and sub-bandgap absorption measurements by the dual-beam photoconductivity (DBF) method were carried out on undoped hydrogenated microcrystalline silicon thin films prepared by VHF-PECVD and hot-wire chemical vapor deposition. The results are compared with those of the constant-photocurrent method (CPM) and photothermal deflection spectroscopy (PDS). It is found that DBP, CPM, and PDS provide complementary data on the optoelectronic processes in microcrystalline silicon.
URI: http://doi.org/10.1023/A:1026147624811
http://hdl.handle.net/11147/4671
ISSN: 0957-4522
0957-4522
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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