Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4512
Title: 1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin films
Authors: Güneş, Mehmet
Johanson, Robert E.
Kasap, Safa O.
Güneş, Mehmet
Izmir Institute of Technology. Physics
Keywords: Thin films
Silicon alloys
Thin film devices
Issue Date: 1999
Publisher: American Physical Society
Source: Güneş, M., Johanson, R. E., and Kasap, S. O. (1999). 1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin films. Physical Review B - Condensed Matter and Materials Physics, 60(3), 1477-1479. doi:10.1103/PhysRevB.60.1477
Abstract: Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H) were measured in the temperature range of 450 K to 500 K and for frequencies from 2 Hz to 3 kHz. The noise spectra divide into two regions that each fit a 1/fα power law but with different slope parameters α and different temperature dependences. At low frequencies, α is greater than unity and increases with temperature. At high frequencies, α is near 0.6 and temperature independent, but the noise magnitude decreases rapidly with temperature. We infer from the different dependences on temperature that the noise is generated by two independent mechanisms operating simultaneously in a-Si:H. We also observe that the 1/f noise exhibits a quadratic dependence on bias current and Gaussian statistics.
URI: http://doi.org/10.1103/PhysRevB.60.1477
http://hdl.handle.net/11147/4512
ISSN: 0163-1829
1098-0121
1550-235X
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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