Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4512
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dc.contributor.authorGüneş, Mehmet-
dc.contributor.authorJohanson, Robert E.-
dc.contributor.authorKasap, Safa O.-
dc.date.accessioned2016-04-15T13:23:21Z
dc.date.available2016-04-15T13:23:21Z
dc.date.issued1999
dc.identifier.citationGüneş, M., Johanson, R. E., and Kasap, S. O. (1999). 1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin films. Physical Review B - Condensed Matter and Materials Physics, 60(3), 1477-1479. doi:10.1103/PhysRevB.60.1477en_US
dc.identifier.issn0163-1829
dc.identifier.issn1098-0121-
dc.identifier.issn1550-235X-
dc.identifier.urihttp://doi.org/10.1103/PhysRevB.60.1477
dc.identifier.urihttp://hdl.handle.net/11147/4512
dc.description.abstractConductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H) were measured in the temperature range of 450 K to 500 K and for frequencies from 2 Hz to 3 kHz. The noise spectra divide into two regions that each fit a 1/fα power law but with different slope parameters α and different temperature dependences. At low frequencies, α is greater than unity and increases with temperature. At high frequencies, α is near 0.6 and temperature independent, but the noise magnitude decreases rapidly with temperature. We infer from the different dependences on temperature that the noise is generated by two independent mechanisms operating simultaneously in a-Si:H. We also observe that the 1/f noise exhibits a quadratic dependence on bias current and Gaussian statistics.en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin filmsen_US
dc.subjectSilicon alloysen_US
dc.subjectThin film devicesen_US
dc.title1/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin filmsen_US
dc.typeArticleen_US
dc.authoridTR1299en_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume60en_US
dc.identifier.issue3en_US
dc.identifier.startpage1477en_US
dc.identifier.endpage1479en_US
dc.identifier.wosWOS:000081551500014
dc.identifier.scopusSCOPUS:2-s2.0-0001300953
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1103/PhysRevB.60.1477-
dc.relation.doi10.1103/PhysRevB.60.1477en_US
dc.coverage.doi10.1103/PhysRevB.60.1477en_US
item.openairetypeArticle-
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.languageiso639-1en-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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