Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2807
Title: ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy
Authors: Wang, X. J.
Tarı, Süleyman
Sporken, R.
Sivananthan, S.
Keywords: Valence band offset
XPS
Strain
Intermixing
Epitaxy
Issue Date: 1-Feb-2011
Publisher: Elsevier Ltd.
Source: Wang, X. J., Tarı, S., Sporken, R., and Sivananthan, S. (2011). ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy. Applied Surface Science, 257 (8), 3346-3349. doi:10.1016/j.apsusc.2010.11.019
Abstract: Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.
URI: http://doi.org/10.1016/j.apsusc.2010.11.019
http://hdl.handle.net/11147/2807
ISSN: 0169-4332
0169-4332
1873-5584
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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