Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2807
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dc.contributor.authorWang, X. J.-
dc.contributor.authorTarı, Süleyman-
dc.contributor.authorSporken, R.-
dc.contributor.authorSivananthan, S.-
dc.date.accessioned2017-01-18T07:14:25Z
dc.date.available2017-01-18T07:14:25Z
dc.date.issued2011-02-01
dc.identifier.citationWang, X. J., Tarı, S., Sporken, R., and Sivananthan, S. (2011). ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy. Applied Surface Science, 257 (8), 3346-3349. doi:10.1016/j.apsusc.2010.11.019en_US
dc.identifier.issn0169-4332
dc.identifier.issn0169-4332-
dc.identifier.issn1873-5584-
dc.identifier.urihttp://doi.org/10.1016/j.apsusc.2010.11.019
dc.identifier.urihttp://hdl.handle.net/11147/2807
dc.description.abstractThin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.en_US
dc.description.sponsorshipEPIR Technologies Inc, CEO Dr. Sivalingam Sivananthan, under contract No. IRD-06-UIC0001en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectValence band offseten_US
dc.subjectXPSen_US
dc.subjectStrainen_US
dc.subjectIntermixingen_US
dc.subjectEpitaxyen_US
dc.titleZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopyen_US
dc.typeArticleen_US
dc.institutionauthorTarı, Süleyman-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume257en_US
dc.identifier.issue8en_US
dc.identifier.startpage3346en_US
dc.identifier.endpage3349en_US
dc.identifier.wosWOS:000286179800034en_US
dc.identifier.scopus2-s2.0-78651347250en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.apsusc.2010.11.019-
dc.relation.doi10.1016/j.apsusc.2010.11.019en_US
dc.coverage.doi10.1016/j.apsusc.2010.11.019en_US
local.message.claim2022-06-07T12:56:30.868+0300|||rp02977|||submit_approve|||dc_contributor_author|||None*
dc.identifier.scopusqualityQ1-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.openairetypeArticle-
item.languageiso639-1en-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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