Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2331
Title: Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films
Authors: Vahaplar, Kadir
Tarı, Süleyman
Tokuç, Hüseyin
Okur, Salih
Vahaplar, Kadir
Tarı, Süleyman
Tokuç, Hüseyin
Okur, Salih
Izmir Institute of Technology. Physics
Keywords: Cobalt
Magnetron sputtering systems
Smooth surface
Thickness of the film
Issue Date: 2009
Publisher: AVS Science and Technology Society
Source: Vahaplar, K., Tarı, S., Tokuç, H., and Okur, S. (2009). Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(5), 2112-2116. doi:10.1116/1.3196784
Abstract: Single Co and Ta/Co bilayers were grown on Si(100) substrates in a magnetron sputtering system. The effect of Ta buffer layer and the thickness of Co layer on the structural and magnetic properties of the Co layers has been studied. A single Co layer shows a textured structure above thickness of 40 nm according to the x-ray diffraction (XRD) pattern. The magnetic properties of Co layers depend significantly on the thickness of the films. Ta grows as highly textured Β -Ta (tetragonal) phase on Si with a smooth surface. The XRD and atomic force microscopy results show that the Ta buffer layer improves the structural properties dramatically, resulting in a strongly textured and smoother surface morphology. The Ta layer also affects the magnetic properties of Co layers to a large extent, especially inducing an in-plane anisotropy in thin Co films.
URI: http://dx.doi.org/10.1116/1.3196784
http://hdl.handle.net/11147/2331
ISSN: 1071-1023
1071-1023
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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