Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2151
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dc.contributor.authorYalçın, Şerife-
dc.contributor.authorÖrer, Sabiha-
dc.contributor.authorTuran, Raşit-
dc.date.accessioned2016-09-20T07:48:32Z
dc.date.available2016-09-20T07:48:32Z
dc.date.issued2008-10
dc.identifier.citationYalçın, Ş., Örer, S., and Turan, R. (2008). 2-D analysis of Ge implanted SiO2 surfaces by laser-induced breakdown spectroscopy. Spectrochimica Acta - Part B Atomic Spectroscopy, 63(10), 1130-1138. doi:10.1016/j.sab.2008.09.002en_US
dc.identifier.issn0584-8547
dc.identifier.issn0584-8547-
dc.identifier.urihttp://doi.org/10.1016/j.sab.2008.09.002
dc.identifier.urihttp://hdl.handle.net/11147/2151
dc.description.abstract2-D elemental distribution of Ge in silicon oxide substrates with differing implantation doses of between 3 × 1016 cm- 2 and 1.5 × 1017 cm- 2 has been investigated by Laser-Induced Breakdown Spectroscopy (LIBS). Spectral emission intensity has been optimized with respect to time, crater size, ablation depth and laser energy. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) coupled with Energy-Dispersive X-Ray Spectroscopy (EDX) have been utilized to obtain crater depth, morphology and elemental composition of the sample material, respectively. LIBS spectral data revealed the possibility of performing 2-D distribution analysis of Ge atoms in silicon oxide substrate. EDX analysis results confirmed that LIBS is capable to detect Ge atoms at concentrations lower than 0.2% (atomic). LIBS as a fast semi-quantitative analysis method with 50 μm lateral and 800 nm depth resolution has been evaluated. Results illustrate the potential use of LIBS for rapid, on-line assessment of the quality of advanced technology materials during the manufacturing process. © 2008 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTÜBİTAK under project No. 105 T134 and İYTEen_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofSpectrochimica Acta, Part B: Atomic Spectroscopyen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectIon implantationen_US
dc.subjectLaser-induced breakdown spectroscopyen_US
dc.subjectLateral resolutionen_US
dc.subjectSurface analysisen_US
dc.subjectSpectrum analysisen_US
dc.title2-D analysis of Ge implanted SiO2 surfaces by laser-induced breakdown spectroscopyen_US
dc.typeArticleen_US
dc.authoridTR12873en_US
dc.departmentIzmir Institute of Technology. Chemistryen_US
dc.identifier.volume63en_US
dc.identifier.issue10en_US
dc.identifier.startpage1130en_US
dc.identifier.endpage1138en_US
dc.identifier.wosWOS:000261523400020
dc.identifier.scopusSCOPUS:2-s2.0-55249122628
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.sab.2008.09.002-
dc.relation.doi10.1016/j.sab.2008.09.002en_US
dc.coverage.doi10.1016/j.sab.2008.09.002en_US
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.deptDepartment of Chemistry-
Appears in Collections:Chemistry / Kimya
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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