Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/14166
Title: Weak Dependence of Voltage Amplification in a Semiconductor Channel on Strain State and Thickness of a Multidomain Ferroelectric in a Bilayer Gate
Authors: Misirlioglu, I.B.
Yapici, M.K.
Sendur, K.
Okatan, M.B.
Keywords: ferroelectric films
gate oxide
negative capacitance
thermodynamics
transistor
Capacitance
Ferroelectric films
Gates (transistor)
Oxide films
Strain
Thermodynamics
A: semiconductors
Bi-layer
Ferroelectrics dielectrics
Gate oxide
Multi-domains
Negative capacitance
Semiconductor channels
Strain state
Voltage amplification
Weak dependences
Ferroelectricity
Publisher: American Chemical Society
Abstract: Ferroelectric/dielectric layered stacks are of special interest as gate oxides in the pursuit of designing low-power transistors, where the electrostatics of such stacks are thought to provide a means to allow for voltage amplification in the semiconductor channel. Strain and thickness dependence of the response of such a gate stack in relation to voltage amplification in a semiconductor channel becomes important to identify, which is what we study in this work using a thermodynamic approach. For a ferroelectric multidomain state as the stable phase in the stack, our findings show that a limited magnitude of voltage amplification appears to be feasible. Voltage amplification at the semiconductor surface is computed to hardly exceed 1.2 in thick bilayers (40 nm) for strains stabilizing the multidomain state and attains even less than this value for the thinner stacks. © 2023 American Chemical Society.
URI: https://doi.org/10.1021/acsaelm.3c01271
https://hdl.handle.net/11147/14166
ISSN: 2637-6113
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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