Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/14166
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dc.contributor.authorMisirlioglu, I.B.-
dc.contributor.authorYapici, M.K.-
dc.contributor.authorSendur, K.-
dc.contributor.authorOkatan, M.B.-
dc.date.accessioned2024-01-06T07:22:29Z-
dc.date.available2024-01-06T07:22:29Z-
dc.date.issued2023-
dc.identifier.issn2637-6113-
dc.identifier.urihttps://doi.org/10.1021/acsaelm.3c01271-
dc.identifier.urihttps://hdl.handle.net/11147/14166-
dc.description.abstractFerroelectric/dielectric layered stacks are of special interest as gate oxides in the pursuit of designing low-power transistors, where the electrostatics of such stacks are thought to provide a means to allow for voltage amplification in the semiconductor channel. Strain and thickness dependence of the response of such a gate stack in relation to voltage amplification in a semiconductor channel becomes important to identify, which is what we study in this work using a thermodynamic approach. For a ferroelectric multidomain state as the stable phase in the stack, our findings show that a limited magnitude of voltage amplification appears to be feasible. Voltage amplification at the semiconductor surface is computed to hardly exceed 1.2 in thick bilayers (40 nm) for strains stabilizing the multidomain state and attains even less than this value for the thinner stacks. © 2023 American Chemical Society.en_US
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştırma Kurumu, TÜBİTAK: 121F180en_US
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.ispartofACS Applied Electronic Materialsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectferroelectric filmsen_US
dc.subjectgate oxideen_US
dc.subjectnegative capacitanceen_US
dc.subjectthermodynamicsen_US
dc.subjecttransistoren_US
dc.subjectCapacitanceen_US
dc.subjectFerroelectric filmsen_US
dc.subjectGates (transistor)en_US
dc.subjectOxide filmsen_US
dc.subjectStrainen_US
dc.subjectThermodynamicsen_US
dc.subjectA: semiconductorsen_US
dc.subjectBi-layeren_US
dc.subjectFerroelectrics dielectricsen_US
dc.subjectGate oxideen_US
dc.subjectMulti-domainsen_US
dc.subjectNegative capacitanceen_US
dc.subjectSemiconductor channelsen_US
dc.subjectStrain stateen_US
dc.subjectVoltage amplificationen_US
dc.subjectWeak dependencesen_US
dc.subjectFerroelectricityen_US
dc.titleWeak Dependence of Voltage Amplification in a Semiconductor Channel on Strain State and Thickness of a Multidomain Ferroelectric in a Bilayer Gateen_US
dc.typeArticleen_US
dc.institutionauthor-
dc.departmentİzmir Institute of Technologyen_US
dc.identifier.wosWOS:001136360700001en_US
dc.identifier.scopus2-s2.0-85179160548en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1021/acsaelm.3c01271-
dc.authorscopusid9741616000-
dc.authorscopusid23483287300-
dc.authorscopusid56020273200-
dc.authorscopusid23668626100-
dc.identifier.wosqualityN/A-
dc.identifier.scopusqualityQ2-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
item.openairetypeArticle-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextnone-
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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