Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/12099
Title: Study of the Effect of Various Chemical Polishing Treatments on Mbe-Grown Cdte/Gaas (211)b Heterostructures
Authors: Bilgilisoy, E.
Özçeri, E.
Tarhan, E.
Keywords: Afm
Cdte Thin Film
Gaas Substrate
Molecular Beam Epitaxy
Raman Spectroscopy
Thin Film Polishing
Xps
Publisher: Sakarya University
Abstract: A three-inch-diameter high quality CdTe thin film was grown on a GaAs (211)B substrate by molecular beam epitaxy (MBE) in ultra-high vacuum conditions. The CdTe/GaAs (211)B heterostructure was then cut into several sample pieces. A few as-grown sample pieces were subjected to chemical etching solutions which created etch pits on the surface. The scanning electron microscopy images of such samples were used to calculate the etch pit densities on the surface. In addition, several as-grown samples were subjected to chemical polishing treatments under different conditions to quantify the removal of O and Te-O structures from the surface. Atomic force microscopy was used to determine as-grown and polished surface morphology and the polish rate of chemical solutions. A study of the surface stoichiometry and the chemical composition of the as-grown and polished CdTe (211)B surfaces were carried out by using X-ray photoelectron spectroscopy. Bulk structural qualities of the as-grown and polished samples were studied in terms of the vibrational and phonon modes via confocal Raman spectroscopy. From a comparative analyses of the results, the best chemical polishing conditions for the MBE-grown CdTe (211)B heterostructure were determined. © 2020, Sakarya University. All rights reserved.
URI: https://doi.org/10.16984/saufenbilder.748315
ISSN: 1301-4048
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
TR Dizin İndeksli Yayınlar / TR Dizin Indexed Publications Collection

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