Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/11555
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTıraş, Engin-
dc.contributor.authorArdalı, Şükrü-
dc.contributor.authorFırat, Hakan Asaf-
dc.contributor.authorArslan, Engin-
dc.contributor.authorÖzbay, Ekmel-
dc.date.accessioned2021-11-06T09:54:39Z-
dc.date.available2021-11-06T09:54:39Z-
dc.date.issued2021-
dc.identifier.issn1369-8001-
dc.identifier.issn1873-4081-
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2021.105936-
dc.identifier.urihttps://hdl.handle.net/11147/11555-
dc.description.abstractThe substrate effects on the electronic transport properties of single-layer graphene on TiO2/Si substrate have been studied. The Hall mobility, sheet carrier density, and transport lifetime were obtained from the temperature-dependent Hall measurements, while the in-plane effective mass, quantum lifetime was obtained from the temperature-dependent variation of the Shubnikov de Haas (SdH) oscillations that were made at 1.8 to 45 K temperature range and up to the magnetic field of 11 T. The measurement results showed that in SLG/TiO2/ Si sample, there were 2.36 +/- 0.12x1016 m-3 amounts of 3D carriers coming from the substrate. In our previous studies, 3D carrier densities were measured as 6.07x1016 m-3 and zero for SLG/SiO2/Si and SLG/SiC sample, respectively. This result shows that the 3D carriers formed in the structure are significantly changed by a substrate. The scattering mechanisms were determined using the zt/zq ratio. The ratio values obtained as 3.66. This value obtained was compared with the values we found for SLG/SiC (zt/zq=1.36) sample and SLG/TiO2/Si (zt/zq=3.08) sample our previous study. The results show that small-angle scattering is dominant in SLG/SiC sample, but large-angle scattering is dominant in SLG/SiO2/Si and SLG/TiO2/Si samples. The charged impurity scattering is the dominant scattering mechanism in SLG/TiO2/Si and SLG/SiO2/Si samples, whereas in SLG/SiC samples, a short-range scattering mechanism such as lattice defects can be said to affect the electronic transport.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrapheneen_US
dc.subjectTitanium dioxideen_US
dc.subjectSiliconen_US
dc.subjectShubnikov-de Haas oscillationsen_US
dc.subjectIn-plane effective massen_US
dc.titleSubstrate Effects on Electrical Parameters of Dirac Fermions in Grapheneen_US
dc.typeArticleen_US
dc.institutionauthorFırat, Hakan Asaf-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume133en_US
dc.identifier.wosWOS:000674454900001-
dc.identifier.scopus2-s2.0-85106316946-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.mssp.2021.105936-
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ1-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.openairetypeArticle-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Files in This Item:
File SizeFormat 
1-s2.0-S1369800121002833-main.pdf2.28 MBAdobe PDFView/Open
Show simple item record



CORE Recommender

Page view(s)

37,634
checked on Mar 31, 2025

Download(s)

2
checked on Mar 31, 2025

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.