Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7555
Title: Strain mapping in single-layer two-dimensional crystals via Raman activity
Authors: Yağmurcukardeş, Mehmet
Bacaksız, Cihan
Ünsal, Emre
Akbalı, Barış
Senger, Ramazan Tuğrul
Şahin, Hasan
Ünsal, Emre
Akbalı, Barış
Senger, Ramazan Tuğrul
Şahin, Hasan
Izmir Institute of Technology. Physics
Izmir Institute of Technology. Photonics
Keywords: Raman activities
Phonon modes
Tensile strain
2D materials
Vibrational modes
Issue Date: Mar-2018
Publisher: American Physical Society
Source: Yağmurcukardeş, M., Bacaksız, C., Ünsal, E., Akbalı, B., Senger, R. T., and Şahin, H. (2018). Strain mapping in single-layer two-dimensional crystals via Raman activity. Physical Review B, 97(11). doi:10.1103/PhysRevB.97.115427
Abstract: By performing density functional theory-based ab initio calculations, Raman-active phonon modes of single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman-active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman-active modes of the crystals under in-plane biaxial strain. The results are summarized as follows: (i) frequencies of the phonon modes soften (harden) under applied tensile (compressive) strains; (ii) the response of the Raman activities to applied strain for the in-plane and out-of-plane vibrational modes have opposite trends, thus, the built-in strains in the materials can be monitored by tracking the relative activities of those modes; (iii) in particular, the A peak in single-layer Si and Ge disappears under a critical tensile strain; (iv) especially in mono- and diatomic single layers, the shift of the peak frequencies is a stronger indication of the strain rather than the change in Raman activities; (v) Raman-active modes of single-layer ReX2 (X=S, Se) are almost irresponsive to the applied strain. Strain-induced modifications in the Raman spectrum of 2D materials in terms of the peak positions and the relative Raman activities of the modes could be a convenient tool for characterization.
URI: https://doi.org/10.1103/PhysRevB.97.115427
https://hdl.handle.net/11147/7555
ISSN: 2469-9950
2469-9950
2469-9969
Appears in Collections:Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Files in This Item:
File Description SizeFormat 
PhysRevB.97.115427.pdfMakale (Article)1.76 MBAdobe PDFThumbnail
View/Open
Show full item record

CORE Recommender

SCOPUSTM   
Citations

25
checked on Jul 31, 2021

WEB OF SCIENCETM
Citations

27
checked on Jul 31, 2021

Page view(s)

12
checked on Aug 3, 2021

Download(s)

10
checked on Aug 3, 2021

Google ScholarTM

Check

Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.