Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/6649
Title: Strain engineering of 2D materials
Authors: Cahangirov, Seymur
Şahin, Hasan
Le Lay, Guy
Rubio, Angel
Şahin, Hasan
Izmir Institute of Technology. Photonics
Keywords: Nanosilicon
Silicene
2D materials
Issue Date: Nov-2017
Publisher: Springer Verlag
Source: Cahangirov, S., Şahin, H., Le Lay, G., and Rubio, A. (2017). Strain engineering of 2D materials. Introduction to the Physics of Silicene and other 2D Materials, (pp. 87-96). Switzerland: Springer. doi:10.1007/978-3-319-46572-2_6
Abstract: When bulk structures are thinned down to their monolayers, degree of orbital interactions, mechanical properties and electronic band dispersion of the crystal structure become highly sensitive to the amount of applied strain. The source of strain on the ultra-thin lattice structure can be (1) an external device or a flexible substrate that can stretch or compress the structure, (2) the lattice mismatch between the layer and neighboring layers or (3) stress induced by STM or AFM tip.
URI: http://doi.org/10.1007/978-3-319-46572-2_6
http://hdl.handle.net/11147/6649
ISBN: 978-3-319-46570-8
ISSN: 0075-8450
0075-8450
Appears in Collections:Photonics / Fotonik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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