Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/6645
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dc.contributor.authorCahangirov, Seymur-
dc.contributor.authorŞahin, Hasan-
dc.contributor.authorLe Lay, Guy-
dc.contributor.authorRubio, Angel-
dc.date.accessioned2018-01-04T08:28:03Z
dc.date.available2018-01-04T08:28:03Z
dc.date.issued2017-11
dc.identifier.citationCahangirov, S., Şahin, H., Le Lay, G., and Rubio, A. (2017). Freestanding silicene. Introduction to the Physics of Silicene and other 2D Materials, (pp. 13-39). Switzerland: Springer. doi:10.1007/978-3-319-46572-2_2en_US
dc.identifier.isbn978-3-319-46570-8
dc.identifier.issn0075-8450
dc.identifier.issn0075-8450-
dc.identifier.urihttp://doi.org/10.1007/978-3-319-46572-2_2
dc.identifier.urihttp://hdl.handle.net/11147/6645
dc.description.abstractObtaining a freestanding 2D graphene flake is relatively easy because it has a naturally occurring 3D layered parent material, graphite, made up of graphene layers weakly bound to each other by van der Waals interaction. In fact, graphite is energetically more favorable than diamond (which is one of the most stable and hard materials on Earth) that is the sp3 hybridized allotrope of carbon. To prepare freestanding graphene, it is enough to come up with a smart procedure for isolating the weakly bound layers of graphite. The same is also true for other layered materials like hexagonal boron nitride, black phosphorus, metal dichalcogenides and oxides. Silicene, on the other hand, doesn’t have a naturally occurring 3D parent material since silicon atoms prefer sp3 hybridization over sp2 hybridization. This makes the synthesis of freestanding silicene very hard, if not impossible. However, it is possible to epitaxially grow silicene on metal substrates and make use of its intrinsic properties by transferring it to an insulating substrate (Tao et al. 2015). In this chapter, we focus on intrinsic properties of freestanding silicene in the absence of the metallic substrate.en_US
dc.language.isoenen_US
dc.publisherSpringer Verlagen_US
dc.relation.ispartofIntroduction to the Physics of Silicene and other 2D Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectNanosiliconen_US
dc.subjectSiliceneen_US
dc.subject2D materialsen_US
dc.titleFreestanding siliceneen_US
dc.typeBook Parten_US
dc.authoridTR216960en_US
dc.institutionauthorŞahin, Hasan-
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.identifier.startpage13en_US
dc.identifier.endpage39en_US
dc.identifier.wosWOS:000400260500002en_US
dc.identifier.scopus2-s2.0-84994639442en_US
dc.relation.publicationcategoryKitap Bölümü - Uluslararasıen_US
dc.identifier.doi10.1007/978-3-319-46572-2_2-
dc.relation.doi10.1007/978-3-319-46572-2_2en_US
dc.coverage.doi10.1007/978-3-319-46572-2_2en_US
dc.identifier.scopusqualityQ3-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeBook Part-
item.languageiso639-1en-
item.fulltextWith Fulltext-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Photonics / Fotonik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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