Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/6496
Title: 1/f noise in amorphous silicon and silicon-germanium alloys
Authors: Johanson, Robert E.
Güneş, Mehmet
Kasap, Safa O.
Güneş, Mehmet
Izmir Institute of Technology. Physics
Keywords: Amorphous silicon
Silicon germanium alloys
Conductance noises
1/f noise
Issue Date: 2003
Publisher: SPIE
Source: Johanson, R. E., Güneş, M., and Kasap, S. O. (2003, June 1-4). 1/f noise in amorphous silicon and silicon-germanium alloys. Peper presented at the 1st International Symposium on Fluctuations and Noise. doi:10.1117/12.497096
Abstract: We report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where the current flow is transverse to the surface and the other longitudinal to it. Because of the large increase in sample resistance in going from transverse to longitudinal conduction, it was not possible to measure both geometries at the same temperature. However, the temperature trends are compatible with a common noise source. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by a factor of 50 over that found in a-Si:H
URI: http://doi.org/10.1117/12.497096
http://hdl.handle.net/11147/6496
ISSN: 0277-786X
0277-786X
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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