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dc.contributor.authorAlaboz, Hakan
dc.contributor.authorDemirhan, Yasemin
dc.contributor.authorYüce, Hürriyet
dc.contributor.authorAygün, Gülnur
dc.contributor.authorÖzyüzer, Lütfi
dc.date.accessioned2017-11-14T08:50:30Z
dc.date.available2017-11-14T08:50:30Z
dc.date.issued2017-07
dc.identifier.citationAlaboz, H., Demirhan, Y., Yüce, H., Aygün, G., and Özyüzer, L. (2017). Comparative study of annealing and gold dopant effect on DC sputtered vanadium oxide films for bolometer applications. Optical and Quantum Electronics, 49(7). doi:10.1007/s11082-017-1072-xen_US
dc.identifier.issn0306-8919
dc.identifier.urihttp://doi.org/10.1007/s11082-017-1072-x
dc.identifier.urihttp://hdl.handle.net/11147/6456
dc.description.abstractVanadium oxide (VOx) thin film has been widely used for IR detectors and it is one of the promising materials for THz detectors due to its high temperature coefficient of resistance (TCR) values. VOx films with proper TCR values have also high resistance and it restricts bolometer performance especially for uncooled bolometers. To overcome this problem, deposition at elevated temperatures or annealing approach has been accepted and used but gold co-deposition approach has been proposed recently. In this study, vanadium oxide films were fabricated on high resistivity silicon substrates by reactive direct current magnetron sputtering in different O2/Ar atmosphere at room temperature. We investigated influence of oxygen partial pressure during deposition process and fabricated VOx thin films with sufficient TCR values for bolometer applications. In order to decrease resistivity of the deposited films, post annealing and gold doping approaches were performed separately. Effect of both post annealing process and gold doping process on structural and electrical properties of VOx thin films deposited at room temperature were investigated and detailed comparison between these methods were presented. We obtained the best possible approach to obtain optimum conditions for the highly reproducible VOx thin films which have the best resistivity and suitable TCR value for bolometer applications.en_US
dc.description.sponsorshipTUBITAK (Scientific and Technological Research Council of Turkey); 115F549en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/MFAG/115F549en_US
dc.relation.isversionof10.1007/s11082-017-1072-xen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGold dopingen_US
dc.subjectMagnetron sputteringen_US
dc.subjectPost annealingen_US
dc.subjectVanadium oxideen_US
dc.subjectOxide filmsen_US
dc.titleComparative study of annealing and gold dopant effect on DC sputtered vanadium oxide films for bolometer applicationsen_US
dc.typearticleen_US
dc.contributor.authorIDTR39698en_US
dc.contributor.authorIDTR5135en_US
dc.contributor.institutionauthorAlaboz, Hakan
dc.contributor.institutionauthorDemirhan, Yasemin
dc.contributor.institutionauthorAygün, Gülnur
dc.contributor.institutionauthorÖzyüzer, Lütfi
dc.relation.journalOptical and Quantum Electronicsen_US
dc.contributor.departmentİYTE, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume49en_US
dc.identifier.issue7en_US
dc.identifier.wosWOS:000405291400004
dc.identifier.scopusSCOPUS:2-s2.0-85020305463
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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