Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5834
Title: Layer- and strain-dependent optoelectronic properties of hexagonal AlN
Authors: Keçik, Deniz
Bacaksız, Cihan
Senger, Ramazan Tuğrul
Durgun, Engin
Keywords: Graphene
Optoelectronic properties
Hexagonal aluminum nitride
Optoelectronic devices
Issue Date: Oct-2015
Publisher: American Physical Society
Source: Keçik, D., Bacaksız, C., Senger, R.T., and Durgun, E. (2015). Layer- and strain-dependent optoelectronic properties of hexagonal AlN. Physical Review B - Condensed Matter and Materials Physics, 92(16). doi:10.1103/PhysRevB.92.165408
Abstract: Motivated by the recent synthesis of layered hexagonal aluminum nitride (h-AlN), we investigate its layer- and strain-dependent electronic and optical properties by using first-principles methods. Monolayer h-AlN is a wide-gap semiconductor, which makes it interesting especially for usage in optoelectronic applications. The optical spectra of 1-, 2-, 3-, and 4-layered h-AlN indicate that the prominent absorption takes place outside the visible-light regime. Within the ultraviolet range, absorption intensities increase with the number of layers, approaching the bulk case. On the other hand, the applied tensile strain gradually redshifts the optical spectra. The many-body effects lead to a blueshift of the optical spectra, while exciton binding is also observed for 2D h-AlN. The possibility of tuning the optoelectronic properties via thickness and/or strain opens doors to novel technological applications of this promising material.
URI: https://doi.org/10.1103/PhysRevB.92.165408
http://hdl.handle.net/11147/5834
ISSN: 1098-0121
1550-235X
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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