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dc.contributor.authorCantaş, Ayten
dc.contributor.authorAygün, Gülnur
dc.contributor.authorTuran, Raşit
dc.date.accessioned2017-04-26T08:19:57Z
dc.date.available2017-04-26T08:19:57Z
dc.date.issued2014-11
dc.identifier.citationCantaş, A., Aygün, G., and Turan, R. (2014). Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film. Applied Surface Science, 318. doi:10.1016/j.apsusc.2014.03.077en_US
dc.identifier.issn0169-4332
dc.identifier.urihttp://doi.org/10.1016/j.apsusc.2014.03.077
dc.identifier.urihttp://hdl.handle.net/11147/5407
dc.description.abstractHigh-κ hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-κ film, prior to HfO2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O2/Ar gas mixture was studied for the optical and structural properties of grown HfO2 high-κ thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO2 dielectric film, while increments in SiO2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O2/Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power. © 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTUBITAK project number of 107T117; Izmir Institute of Technologywith BAP project number of 2008IYTE37en_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.apsusc.2014.03.077en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectOxide filmsen_US
dc.subjectFTIRen_US
dc.subjectFourier transform infrared spectroscopyen_US
dc.subjectThin filmsen_US
dc.subjectReactive rf sputteringen_US
dc.subjectCrystal structureen_US
dc.titleImpact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin filmen_US
dc.typearticleen_US
dc.contributor.authorIDTR39698en_US
dc.contributor.institutionauthorCantaş, Ayten
dc.contributor.institutionauthorAygün, Gülnur
dc.relation.journalApplied Surface Scienceen_US
dc.contributor.departmentİYTE, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume318en_US
dc.identifier.startpage199en_US
dc.identifier.endpage205en_US
dc.identifier.wosWOS:000344380500036
dc.identifier.scopusSCOPUS:2-s2.0-84909961633
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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