Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4681
Title: 1/f noise in hydrogenated amorphous silicon-germanium alloys
Authors: Johanson, Robert E.
Güneş, Mehmet
Kasap, Safa O.
Güneş, Mehmet
Izmir Institute of Technology. Physics
Keywords: Amorphous silicon
Coplanar electrodes
Hydrogenation
Semiconducting germanium
Silanes
Spurious signal noise
Issue Date: Aug-2003
Publisher: Institute of Electrical Engineers
Source: Johanson, R. E., Güneş, M., and Kasap, S. O. (2003). 1/f noise in hydrogenated amorphous silicon-germanium alloys. IEE Proceedings: Circuits, Devices and Systems, 150(4), 345-349. doi:10.1049/ip-cds:20030749
Abstract: Measurements were made of conductance noise of a-Si:H and a-Si 1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloyinzg with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples.
URI: http://doi.org/10.1049/ip-cds:20030749
http://hdl.handle.net/11147/4681
ISSN: 1350-2409
1350-2409
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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