Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4679
Title: Stability of microcrystalline silicon for thin film solar cell applications
Authors: Finger, Friedhelm
Carius, Reinhard
Dylla, Thorsten
Klein, Stefan
Okur, Salih
Güneş, Mehmet
Keywords: Thin films
Light-induced degradation
Adsorption
Amorphous silicon
Solar cells
Oxidation
Issue Date: Aug-2003
Publisher: Institute of Electrical Engineers
Source: Finger, F., Carius, R., Dylla, T., Klein, S., Okur, S., and Güneş, M. (2003). Stability of microcrystalline silicon for thin film solar cell applications. IEE Proceedings: Circuits, Devices and Systems, 150(4), 300-308. doi:10.1049/ip-cds:20030636
Abstract: The development of microcrystalline silicon (μc-Si:H) for solar cells has made good progress with efficiencies better than those of amorphous silicon (a-Si:H) devices. Of particular interest is the absence of light-induced degradation in highly crystalline μc-Si:H. However, the highest efficiencies are obtained with material which may still include a-Si:H regions and light-induced changes may be expected in such material. On the other hand, material of high crystallinity is susceptible to in-diffusion of atmospheric gases which, through adsorption or oxidation, affect the electronic transport. Investigations are presented of such effects concerning the stability of μc-Si:H films and solar cells prepared by plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition.
URI: http://doi.org/10.1049/ip-cds:20030636
http://hdl.handle.net/11147/4679
ISSN: 1350-2409
1350-2409
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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