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dc.contributor.authorGüneş, Mehmet
dc.contributor.authorJohanson, Robert E.
dc.contributor.authorKasap, Safa O.
dc.contributor.authorFinger, Friedhelm
dc.contributor.authorLambertz, Andreas
dc.date.accessioned2016-05-27T12:25:55Z
dc.date.available2016-05-27T12:25:55Z
dc.date.issued2003-10
dc.identifier.citationGüneş, M., Johanson, R. E., Kasap, S. O., Finger, F., and Lambertz, A. (2003). Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics, 14(10-12), 731-732. doi:10.1023/A:1026199608881en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://doi.org/10.1023/A:1026199608881
dc.identifier.urihttp://hdl.handle.net/11147/4674
dc.description.abstractCoplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity.en_US
dc.description.sponsorshipTÜBİTAK and NSECRen_US
dc.language.isoengen_US
dc.publisherKluwer Academic Publishersen_US
dc.relation.isversionof10.1023/A:1026199608881en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin filmsen_US
dc.subjectCoplanar conductanceen_US
dc.subjectCrystalline materialsen_US
dc.subjectHydrogenationen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectSiliconen_US
dc.titleConductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin filmsen_US
dc.typeconferenceObjecten_US
dc.contributor.authorIDTR1299en_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume14en_US
dc.identifier.issue10-12en_US
dc.identifier.startpage731en_US
dc.identifier.endpage732en_US
dc.identifier.wosWOS:000185962400031
dc.identifier.scopusSCOPUS:2-s2.0-0242285610
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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