Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4674
Title: Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films
Authors: Güneş, Mehmet
Johanson, Robert E.
Kasap, Safa O.
Finger, Friedhelm
Lambertz, Andreas
Güneş, Mehmet
Izmir Institute of Technology. Physics
Keywords: Thin films
Coplanar conductance
Crystalline materials
Hydrogenation
Plasma enhanced chemical vapor deposition
Silicon
Issue Date: Oct-2003
Publisher: Springer Verlag
Source: Güneş, M., Johanson, R. E., Kasap, S. O., Finger, F., and Lambertz, A. (2003). Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics, 14(10-12), 731-732. doi:10.1023/A:1026199608881
Abstract: Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity.
URI: http://doi.org/10.1023/A:1026199608881
http://hdl.handle.net/11147/4674
ISSN: 0957-4522
0957-4522
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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