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Title: 1/f Noise in doped and undoped amorphous silicon
Authors: Johanson, Robert E.
Güneş, Mehmet
Kasap, Safa O.
Güneş, Mehmet
Izmir Institute of Technology. Physics
Keywords: Silicon
Random-telegraph noise
Electronic noise
Issue Date: May-2000
Publisher: Elsevier Ltd.
Source: Johanson, R. E., Güneş, M., and Kasap, S. O. (2000). 1/f Noise in doped and undoped amorphous silicon. Journal of Non-Crystalline Solids, 266-269(PART 1), 242-246. doi:10.1016/S0022-3093(99)00832-7
Abstract: We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amorphous silicon (a-Si:H) as a function of temperature. In general, the spectra can be fit to a power law, 1/fα, although in the p-type and undoped samples deviations from a strict power law occur. For n-type and p-type samples, the noise magnitude increases with temperature by approximately a factor of 5 from 295 to 450 K. The slope parameter, α, also increases with temperature in the p-type samples from near unity to 1.4 but not in the n-type sample where it remains near 1.05 independent of temperature. The undoped sample could be measured only over a limited range of elevated temperatures, but α does trend larger. The undoped and lightly doped material have similar noise levels but larger p-type doping reduces the noise by two orders of magnitude. Correlation measurements indicate the 1/f noise is Gaussian for all samples. However, intermittent random-telegraph noise is observed in n-type material.
ISSN: 0022-3093
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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