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https://hdl.handle.net/11147/4385| Title: | Material Parameters of Quaternary Iii–v Semiconductors for Multilayer Mirrors at 1:55 Μm Wavelength | Authors: | Güden, Mustafa Piprek, Joachim |
Keywords: | Semiconductors Gallium arsenide semiconductors Alloys Optoelectronics |
Publisher: | IOP Publishing Ltd. | Source: | Güden, M., and Piprek, J. (1996). Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 m wavelength. Modelling and Simulation in Materials Science and Engineering, 4(4), 349-357. | Abstract: | Nine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system. | URI: | http://hdl.handle.net/11147/4385 | ISSN: | 0965-0393 1361-651X |
| Appears in Collections: | Mechanical Engineering / Makina Mühendisliği Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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