Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4385
Title: Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 µm wavelength
Authors: Güden, Mustafa
Piprek, Joachim
Güden, Mustafa
Keywords: Semiconductors
Gallium arsenide semiconductors
Alloys
Optoelectronics
Issue Date: 1996
Publisher: IOP Publishing Ltd.
Source: Güden, M., and Piprek, J. (1996). Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 m wavelength. Modelling and Simulation in Materials Science and Engineering, 4(4), 349-357.
Abstract: Nine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.
URI: http://hdl.handle.net/11147/4385
ISSN: 0965-0393
0965-0393
1361-651X
Appears in Collections:Mechanical Engineering / Makina Mühendisliği
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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