Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 µm wavelength

Abstract

Nine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.