Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2856
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dc.contributor.authorOkur, Salih-
dc.contributor.authorYakuphanoğlu, Fahrettin-
dc.date.accessioned2017-01-25T12:00:01Z
dc.date.available2017-01-25T12:00:01Z
dc.date.issued2009-02
dc.identifier.citationOkur, S. and Yakuphanoğlu, F. (2009). Analysis of interface states of the pentacene organic thin-film phototransistor by conductance technique. Sensors and Actuators, A: Physical, 146(2), 241-245. doi:10.1016/j.sna.2008.11.023en_US
dc.identifier.issn0924-4247
dc.identifier.issn0924-4247-
dc.identifier.urihttp://dx.doi.org/10.1016/j.sna.2008.11.023
dc.identifier.urihttp://hdl.handle.net/11147/2856
dc.description.abstractA pentacene thin-film transistor with a channel width of 300 μm and a channel length of 30 μm has been successfully fabricated on n-Si substrate with thermally oxidized SiO2 as a gate insulator. The photovoltaic and interface state density properties of the transistor have been investigated. A pentacene film of 200 nm thickness was deposited on the SiO2 layer with a vacuum thermal evaporator. Atomic force microscopy images of the pentacene film on SiO2 insulating layer show a homogeneous film surface with the rms roughness of 11 nm. The transistor shows p-channel characteristics, as a result of positive carriers generated in the pentacene film for the negative bias voltages applied to the gate. The photosensitivity (Iph/Idark) is measured as 1.45 at an illumination intensity of 3500 lux at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor characteristic. The field-effect mobility of the pentacene OTFT was found to be 0.021 cm2/(V s). The interface state density of the transistor was determined using conductance technique and was found to be about 1.191 × 1010 eV-1 cm-2.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectInterface state densityen_US
dc.subjectOrganic semiconductoren_US
dc.subjectThin-film transistoren_US
dc.subjectTransistorsen_US
dc.titleAnalysis of interface states of the pentacene organic thin-film phototransistor by conductance techniqueen_US
dc.typeArticleen_US
dc.institutionauthorOkur, Salih-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume149en_US
dc.identifier.issue2en_US
dc.identifier.startpage241en_US
dc.identifier.endpage245en_US
dc.identifier.wosWOS:000263620200011
dc.identifier.scopusSCOPUS:2-s2.0-59249105098
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.sna.2008.11.023-
dc.relation.doi10.1016/j.sna.2008.11.023en_US
dc.coverage.doi10.1016/j.sna.2008.11.023en_US
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeArticle-
item.grantfulltextopen-
item.languageiso639-1en-
item.fulltextWith Fulltext-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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