Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2797
Title: The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films
Authors: Güneş, Mehmet
Yavaş, Mert
Klomfaß, Josef
Finger, Friedhelm
Keywords: Absorption spectroscopy
Annealed state
Band gaps
Dual beam photoconductivities
Optoelectronic properties
Time dependence
Issue Date: Feb-2010
Publisher: Springer Verlag
Source: Güneş, M., Yavaş, M. E. D., Klomfaß, J., and Finger, F. (2010). The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films. Journal of Materials Science: Materials in Electronics, 21(2), 153-159. doi:10.1007/s10854-009-9886-3
Abstract: Effects of native and light induced defects states in hydrogenated amorphous silicon-germanium alloy thin films with different Ge concentrations have been investigated by using steady-state photoconductivity, dual beam photoconductivity (DBP), transmission spectroscopy and photothermal deflection spectroscopy (PDS) techniques. In the annealed state, sub-bandgap absorption spectra obtained from both PDS and DBP overlap very well at energies above 1.4 eV. However, differences in α (hν) spectrum exist in the lower energy part of absorption spectrum. The α (hν) value measured at 1.0 eV is the lowest for 10% Ge sample and increases gradually as Ge content of the sample increases. In the light soaked state, time dependence of photoconductivity decay obeys to t -x power law, where x changes from 0.30 to 0.60 for samples with low Ge content and 0.05-0.1 for samples with high Ge content. Correspondingly, the increase of the sub-bandgap absorption coefficient at lower energies obeys to t y power law, where y values are lower than the x value of the same sample. It can be inferred that sub-bandgap absorption and photoconductivity measurements are not controlled by the same set of defects created in the bandgap of alloys. © 2009 Springer Science+Business Media, LLC.
URI: http://doi.org/10.1007/s10854-009-9886-3
http://hdl.handle.net/11147/2797
ISSN: 0957-4522
0957-4522
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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