Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2786
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dc.contributor.authorTuna, Öcal-
dc.contributor.authorSelamet, Yusuf-
dc.contributor.authorÖzyüzer, Gülnur Aygün-
dc.contributor.authorÖzyüzer, Lütfi-
dc.date.accessioned2017-01-13T13:06:53Z
dc.date.available2017-01-13T13:06:53Z
dc.date.issued2010
dc.identifier.citationTuna, Ö., Selamet, Y., Aygün, G., and Özyüzer, L. (2010). High quality ITO thin films grown by dc and RF sputtering without oxygen. Journal of Physics D: Applied Physics, 43(5). doi:10.1088/0022-3727/43/5/055402en_US
dc.identifier.issn0022-3727
dc.identifier.issn0022-3727-
dc.identifier.issn1361-6463-
dc.identifier.urihttp://doi.org/10.1088/0022-3727/43/5/055402
dc.identifier.urihttp://hdl.handle.net/11147/2786
dc.description.abstractHigh quality indium tin oxide (ITO) thin films were grown without oxygen by both dc and RF magnetron sputtering techniques on glass substrates. The effects of substrate temperature, film thickness and sputtering method on the structural, electrical and optical properties of the as-grown films were investigated. The results showed that the substrate temperature had substantial effects on the film properties, in particular on the crystallization and resistivity. When the substrate temperature was increased to 150 °C, crystallization in the (2 2 2) plane started appearing for both dc and RF sputtered films. We additionally found that with further increments of substrate temperature, the preferred crystallization orientation changed differently for dc and RF sputtered films. Optical transmission in the visible region for a film thickness of 70 nm was found to be above 85%. The bandgap was calculated to be about 3.64 eV for the substrate temperature of 150 °C for a 70 nm thick film. The value of the bandgap increased with respect to the increment in film thickness as well as substrate temperature. We also measured the temperature dependence of the resistivity and Hall coefficient of the films, and calculated the carrier concentration and Hall mobility. Very low room temperature resistivities for dc and RF magnetron sputtered grown films of about 1.28 × 10-4 Ω cm and 1.29 × 10-4 Ω cm, respectively, were obtained. © 2010 IOP Publishing Ltd.en_US
dc.description.sponsorshipMinistry of Industry of Turkey, SANTEZ project number 00058.STZ.2007-1; TÜBİTAK project number 107T117en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltd.en_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectOptical filmsen_US
dc.subjectBand gapsen_US
dc.subjectCrystallization orientationen_US
dc.subjectIndium tin oxide thin filmsen_US
dc.subjectTitanium compoundsen_US
dc.subjectOptical transmissionsen_US
dc.titleHigh quality ITO thin films grown by dc and RF sputtering without oxygenen_US
dc.typeArticleen_US
dc.authoridTR39698en_US
dc.authoridTR5135en_US
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume43en_US
dc.identifier.issue5en_US
dc.identifier.wosWOS:000274411200015
dc.identifier.scopusSCOPUS:2-s2.0-76649112402
dc.relation.tubitakinfo:eu-repo/grantAgreement/TUBITAK/TBAG/107T117
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1088/0022-3727/43/5/055402-
dc.relation.doi10.1088/0022-3727/43/5/055402en_US
dc.coverage.doi10.1088/0022-3727/43/5/055402en_US
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeArticle-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.deptDepartment of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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