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Ge nanocrystals embedded in SiO2 in MOS based radiation sensors
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In this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated. SiO2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements. The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation. The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO2. The gamma radiation effects from 500 up to 4000 Gray were investigated. Capacitance-voltage measurements were performed and analyzed. Oxide traps and interface trap charges were calculated. Results show that MOS structure with Ge nanocrystals embedded in SiO2 is a good candidate to be used in radiation sensors, especially at high radiation doses. © 2010 Elsevier B.V. All rights reserved.