Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2327
Title: Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures
Authors: Okur, Salih
Yakuphanoğlu, Fahrettin
Özsöz, Mehmet
Kadayıfçılar, Pınar Kara
Okur, Salih
Keywords: DNA
Ideality factor
Organic/inorganic junction
Semiconducting silicon compounds
Issue Date: Nov-2009
Publisher: Elsevier Ltd.
Source: Okur, S., Yakuphanoğlu, F., Özsöz, M., and Kadayıfcılar, P.K. (2009). Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures. Microelectronic Engineering, 86(11), 2305-2311. doi:10.1016/j.mee.2009.04.017
Abstract: The effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on n-Si wafer were characterized by atomic force microscopy. The effect of the thickness and coverage rate of the DNA layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance, and interface state density. The thickness and coverage rate of the DNA layer significantly affects the electrical properties of the Au/DNA/n-Si organic-on-inorganic structures. The interface state density properties of the Au/DNA/n-Si diodes were determined by conductance technique. The results show that the interface state density decreases with decrease in both film thickness and coverage rate of the DNA in an acetate buffer, modifying the electronic parameters of the Au/DNA/n-Si diodes.
URI: http://dx.doi.org/10.1016/j.mee.2009.04.017
http://hdl.handle.net/11147/2327
ISSN: 0167-9317
0167-9317
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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