Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2220
Title: Diffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD)
Authors: Okur, Salih
Güneş, Mehmet
Finger, Friedhelm
Carius, Reinhard
Keywords: Thin films
Diffusion length
Hot-wire/catalytic chemical vapor deposition
Raman spectroscopy
Issue Date: Apr-2006
Publisher: Elsevier Ltd.
Source: Okur, S., Güneş, M., Finger, F., and Carius, R. (2006). Diffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD). Thin Solid Films, 501(1-2), 137-140. doi:10.1016/j.tsf.2005.07.141
Abstract: Hydrogenated microcrystalline silicon (μc-Si:H) films prepared by using the hot-wire/catalytic chemical vapor deposition (HWCVD) technique at low substrate temperatures between 185 °C and 220 °C with different silane concentrations (SC) were investigated using steady-state photocarrier grating (SSPG) and the steady-state photoconductivity methods (SSPC). Crystalline volume fractions (IC RS) obtained from Raman spectroscopy change from 0.22 to 0.77. The diffusion length (LD) is measured at generation rates between G = 1019 and 1021 cm- 3 s- 1. LD changes from 27 nm to 270 nm, with maximum values around SC = 5%. The dependence of LD on SC is similar to that observed for similar quality microcrystalline silicon films prepared using the VHF-PECVD technique. The grating quality factor, γ0, drops from about 0.9 to 0.5 after transition to the microcrystalline regime as indication of scattering from surface patterns.
Description: Proceedings of the Third International Conference on Hot-Wire; 23 August 2004 through 27 August 2004
URI: http://doi.org/10.1016/j.tsf.2005.07.141
http://hdl.handle.net/11147/2220
ISSN: 0040-6090
0040-6090
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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