Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2196
Title: XPS study of pulsed Nd:YAG laser oxidized Si
Authors: Özyüzer, Gülnur Aygün
Atanassova, Elenada A.
Kostov, K.
Turan, Raşit
Keywords: Neodymium lasers
Laser-matter interactions
Lasers
Silicon
XPS
Issue Date: Aug-2006
Publisher: Elsevier Ltd.
Source: Aygün, G., Atanassova, E. A., Kostov, K., and Turan, R. (2006). XPS study of pulsed Nd:YAG laser oxidized Si. Journal of Non-Crystalline Solids, 352(28-29), 3134-3139. doi:10.1016/j.jnoncrysol.2006.03.063
Abstract: X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxides in a relatively wide interfacial region is found. It is concluded that post-oxidation annealing is necessary in order to improve the microstructure of both oxide and near interface region.
URI: http://doi.org/10.1016/j.jnoncrysol.2006.03.063
http://hdl.handle.net/11147/2196
ISSN: 0022-3093
0022-3093
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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